Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

sales@angeltondal.com

86-755-89992216

Shenzhen Hengstar Technology Co., Ltd.
BerandaProdukAksesori Modul Cerdas IndustriDDR3 Spesifikasi Modul Memori Udimm

DDR3 Spesifikasi Modul Memori Udimm

Jenis pembayaran:
L/C,T/T,D/A
Inkoterm:
FOB,EXW,CIF
Min. Memesan:
1 Piece/Pieces
Transportasi:
Ocean,Air,Express,Land
Share:
Ngobrol
  • Deskripsi Produk
Overview
Atribut Produk

Model NoNSO4GU3AB

Kemampuan Pasokan & Informasi Tambahan

TransportasiOcean,Air,Express,Land

Jenis pembayaranL/C,T/T,D/A

InkotermFOB,EXW,CIF

& pengiriman paket
Menjual unit:
Piece/Pieces

4GB 1600MHz 240-pin DDR3 UDIMM


Sejarah Revisi

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Tabel Informasi Pemesanan

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Keterangan
Hengstar Unbuffered DDR3 SDRAM DIMMS (Tingkat Data Ganda DRAM DRAM DUAL MODUS DUAL IN-LINE) adalah modul memori operasi berkecepatan tinggi yang rendah yang menggunakan perangkat SDRAM DDR3. NS04GU3AB adalah 512m x 64-bit peringkat 4GB DDR3-1600 CL11 1.5V SDRAM Produk DIMM Unbuffered, berdasarkan komponen FBGA enam belas 256m x 8-bit. SPD diprogram ke Jedec Standard Latency DDR3-1600 waktu 11-11-11 pada 1.5V. Setiap DIMM 240-pin menggunakan jari kontak emas. SDRAM Unbuffered DIMM dimaksudkan untuk digunakan sebagai memori utama ketika diinstal dalam sistem seperti PC dan workstation.


Fitur
 Pasokan kekuatan: VDD = 1.5V (1.425V hingga 1.575V)
VDDQ = 1.5V (1.425V hingga 1.575V)
800MHz FCK untuk 1600MB/dtk/pin
8 bank internal independen
Latensi CAS yang dapat diprogram: 11, 10, 9, 8, 7, 6
 Latensi aditif yang dapat diprogram: 0, cl - 2, atau cl - 1 jam
8-bit pre-fetch
Burst Length: 8 (Interleave Tanpa Batas, Sequential Dengan Alamat Awal "000" saja), 4 dengan TCCD = 4 yang tidak memungkinkan Baca atau Tulis dengan mulus [baik dengan cepat menggunakan A12 atau MRS]
Bi-directional diferensial data strobe
Calibration brasi internal (self); Kalibrasi mandiri internal melalui zq pin (RZQ: 240 ohm ± 1%)
Ten Die Pengakhiran Menggunakan Pin ODT
 Periode refresh rata -rata 7.8us pada lebih rendah dari tCase 85 ° C, 3,9us pada 85 ° C <tCase <95 ° C
Synchronous Reset
 Kekuatan drive output data yang dapat disesuaikan
Topologi FLY-BY
PCB: Tinggi 1.18 ”(30mm)
Bohs yang sesuai dan bebas halogen


Parameter waktu utama

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Tabel alamat

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Deskripsi pin

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

Catatan Tabel deskripsi pin di bawah ini adalah daftar komprehensif dari semua pin yang mungkin untuk semua modul DDR3. Semua pin terdaftar Mei tidak didukung pada modul ini. Lihat penugasan PIN untuk informasi khusus untuk modul ini.


Diagram blok fungsional

Modul 4GB, 512MX64 (2rank X8)

1


2


Catatan:
1. Bola ZQ pada setiap komponen DDR3 terhubung ke resistor 240Ω ± 1% eksternal yang diikat ke tanah. Ini digunakan untuk kalibrasi pemutusan hubungan dan output komponen.



Dimensi modul


Tampak depan

3

Tampak depan

4

Catatan:
1. Semua dimensi dalam milimeter (inci); Max/Min atau tipikal (Typ) di mana dicatat.
2.Toleransi pada semua dimensi ± 0,15mm kecuali ditentukan lain.
3. Diagram dimensi hanya untuk referensi.

Kategori Produk : Aksesori Modul Cerdas Industri

Email ke pemasok ini
  • *Subjek:
  • *Untuk:
    Mr. Jummary
  • *Email:
  • *Pesan:
    Pesan Anda harus antara 20-8000 karakter
BerandaProdukAksesori Modul Cerdas IndustriDDR3 Spesifikasi Modul Memori Udimm
Kirim permintaan
*
*

Rumah

Product

Phone

Tentang kami

Permintaan

We will contact you immediately

Fill in more information so that we can get in touch with you faster

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

Kirim